PE632BA Datasheet - UNIKC

PE632BA MOSFET

PE632BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4.5mΩ @VGS = 10V ID 53A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 53 Continuous Drain Current2 Tc = 100 °C TA = 25 °C ID 33 15 Pulsed Drain Current1 TA= 70 °C IDM 12 100 Avalanche Current IAS 37.5 Avalanche Energy L =0.1mH EAS 70 TC = 25 °C 22.7 Power.

PE632BA Datasheet (775.57 KB)