PE636BA Datasheet - UNIKC

PE636BA N-Channel Enhancement Mode MOSFET

PE636BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 33A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 33 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID 21 10 Pulsed Drain Current1 TA= 70 °C IDM 8 100 Avalanche Current IAS 20 Avalanche Energy L =0.1mH EAS 20 TC = 25 °C 17.8 Power Diss.

PE636BA Datasheet (497.13 KB)