KSD5703 Silicon NPN Power Transistor

NJS

Description

JZII.EU <3£,tni-L,onauctori L/^ioaucti, Line.20 STERN AVE.SPRINGFIELD, NEW JERSEY 07081 U.S.A.Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBo=1500V(Min). High Switching Speed. Low Saturation Voltage TELEPHONE: (973) 376-2922 (212)22.

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Datasheet Specifications

Part number: KSD5703
Manufacturer: NJS
File Size: Direct Link
Datasheet: KSD5703-NewJerseySemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 10 A Ic Collector Cu

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KSD5703 Silicon NPN Power Transistor NJS

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