NSi6602-Q1 Datasheet - NOVOSENSE

NSi6602-Q1 - High Reliability Isolated Dual-Channel Gate Driver

14 6.1.

INSULATION CHARACTERISTICS 14 6.2.

SAFETY-LIMITING VALUES 15 6.3.

SAFETY-RELATED CERTIFICATIONS 17 7.

FUNCTION DESCRIPTION 18 7.1.

OVERVIEW 18 7.2.

UNDER VOLTAGE LOCK OUT (UVLO) 18 7.3.

INPUT AND OUTPUT LOGIC TABLE 19 7.4.

PROGRAMMABLE DEADTIME (DT PIN)

NSi6602-Q1 High Reliability Isolated Dual-Channel Gate Driver Datasheet (EN) 1.0 Product Overview NSI6602 is a family of high reliability isolated dual-channel gate driver ICs which can be designed to drive power transistor up to 2MHz switching frequency.

Each output could source 4A and sink 6A peak current with fast 25ns propagation delay and 5ns maximum delay matching.

The NSI6602 provides 3000Vrms isolation in SOP16 (150mil) package, and 5700Vrms isolation in SOP16 (300mil) or SOP14 (300mil)

NSi6602-Q1 Features

* Isolated dual channel driver

* Input side supply voltage: 2.7V to 5.5V

* Driver side supply voltage: up to 25V with UVLO

* 4A peak source and 6A peak sink output

* High CMTI: ±150kV/us typical

* 25ns typical propagation delay

* 5ns maximum delay matching

* 6ns maxim

NSi6602-Q1-NOVOSENSE.pdf