NSi6602-Q1 Datasheet PDF - NOVOSENSE High Reliability Isolated Dual-Channel Gate Driver Specs

NSi6602-Q1 - High Reliability Isolated Dual-Channel Gate Driver

Datasheet Summary

Description

6.1.

INSULATION CHARACTERISTICS 14 6.2.

SAFETY-LIMITING VALUES 15 6.3.

Features

Isolated dual channel driver.
Input side supply voltage: 2.7V to 5.5V.
Driver side supply voltage: up to 25V with UVLO.
4A peak source and 6A peak sink output.
High CMTI: ±150kV/us typical.
25ns typical propagation delay.
5ns maximum delay matching.
6ns maximum pulse width distortion.
Programmable deadtime.
Accepts minimum input pulse width 20ns.
Operation temperature: -40℃~125℃.
AEC-Q100 (Grade 1) qualified for auto-motive.

Datasheet Details

Part number	NSi6602-Q1
Manufacturer	NOVOSENSE
File Size	1.34 MB
Description	High Reliability Isolated Dual-Channel Gate Driver
Datasheet	NSi6602-Q1 Datasheet
Additional preview pages of the NSi6602-Q1 datasheet.

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Full PDF Text Transcription

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NSi6602-Q1 High Reliability Isolated Dual-Channel Gate Driver Datasheet (EN) 1.0 Product Overview NSI6602 is a family of high reliability isolated dual-channel gate driver ICs which can be designed to drive power transistor up to 2MHz switching frequency. Each output could source 4A and sink 6A peak current with fast 25ns propagation delay and 5ns maximum delay matching. The NSI6602 provides 3000Vrms isolation in SOP16 (150mil) package, and 5700Vrms isolation in SOP16 (300mil) or SOP14 (300mil) package. System robustness is supported by 150kV/us typical common-mode transient immunity (CMTI). The driver operates with a maximum supply voltage of 25V, while the input-side accepts from 2.7V to 5V supply voltage.

Published: Aug 25, 2024 |