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NTE6090 Silicon Dual Power Rectifier

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Description

NTE6090 Silicon Dual Power Rectifier .
The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier meta.

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Datasheet Specifications

Part number
NTE6090
Manufacturer
NTE Electronics
File Size
20.64 KB
Datasheet
NTE6090_NTEElectronics.pdf
Description
Silicon Dual Power Rectifier

Features

* D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range D Guarding for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature D Guaranteed Reverse Avalanche Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM

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