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NTE61 - Silicon Complementary Transistors

This page provides the datasheet information for the NTE61, a member of the NTE60 Silicon Complementary Transistors family.

Datasheet Summary

Description

The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.

Features

  • D High Safe Operating Area: 250W @ 50V D For Low Distortion Complementary Designs D High DC Current Gain: hFE = 25 Min @ IC = 5A Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO(sus).
  • . . . . 140V Collector.
  • Base Voltage, VCBO.
  • . . . . 140V Emitter.
  • Base Voltage, VEBO.

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Datasheet preview – NTE61

Datasheet Details

Part number NTE61
Manufacturer NTE
File Size 24.10 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE61 Datasheet
Additional preview pages of the NTE61 datasheet.

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Full PDF Text Transcription

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NTE60 (NPN) & NTE61 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. Features: D High Safe Operating Area: 250W @ 50V D For Low Distortion Complementary Designs D High DC Current Gain: hFE = 25 Min @ IC = 5A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Emitter–Base Voltage, VEBO . .
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