MJE2955T
NTE
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Silicon pnp transistor. The MJE2955T (PNP) and MJE3055T (NPN) are silicon complementary power transistors in a TO
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MJE2955 - PNP Silicon Transistor
(Fairchild)
MJE2955T
MJE2955T
General Purpose and Switching Applications
• DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2M.
MJE2955 - Plastic-Encapsulate Transistors
(GME)
Plastic-Encapsulate Transistors
FEATURES
DC Current Gain Specified to 10A. High Current Gain.
Pb
Lead-free
Production specification
MJE2955
TO.
MJE2955 - (MJE2955 / MJE3055) POWER TRANSISTORS
(Motorola)
..
..
.
MJE2955 - COMPLEMENTARY SILICON POWER TRANSISTORS
(STMicroelectronics)
MJE2955T
®
MJE3055T
COMPLEMENTARY SILICON POWER TRANSISTORS
s STMicroelectronics PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTIO.
MJE2955-G - General Purpose Transistor
(Comchip)
General Purpose Transistor
MJE2955-G (PNP)
RoHS Device
Features
- General Purpose and Switching Application
TO-220-3L
0.114(2.89) 0.102(2.59)
0.40.
MJE2955A - Complementary Silicon power transistors
(nELL)
SEMICONDUCTOR
MJE3055A(NPN) MJE2955A(PNP) RRooHHSS
Nell High Power Products
Complementary Silicon power transistors (10A / 60V / 75W)
FEATURES
Des.
MJE2955T - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
MJE2955T
Rev.F Mar.-2016
DATA SHEET
/ Descriptions
TO-220 PNP 。Silicon PNP transistor in a TO-220 Plastic Package.
/ Features
,。 Large DC cur.
MJE2955T - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
MJE2955T
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -60V(Min) ·High DC Current Gain-
: hFE= 20-.
MJE2955T - 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE2955T/D
Complementary Silicon Plastic Power Transistors
MJE2955T * NPN MJE3055T *
.
MJE2955T - Complementary Silicon Plastic Power Transistors
(ON)
MJE2955T (PNP), MJE3055T (NPN)
Complementary Silicon Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and sw.