NTE281 Datasheet, Transistors, NTE

NTE281 Features

• Transistors D High Power Dissipation: PC = 100W D Collector
    –Emitter Breakdown Voltage: V(BR)CEO = 140V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector<

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NTE281

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NTE

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📄 Datasheet

Description:

Silicon complementary transistors. The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package designed for use in high power, high f

NTE281 Application

• Applications Features: D High Power Dissipation: PC = 100W D Collector
    –Emitter Breakdown Voltage: V(BR)CEO = 140V Absolute Maximu

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