NTE342 Datasheet, Transistor, NTE

NTE342 Features

• Transistor D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) D Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz Application: D 4 to

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NTE342

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NTE

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📄 Datasheet

Description:

Silicon npn transistor. The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.

NTE342 Application

• Applications Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) D Ability to Withstand more than 20:1 VSWR Load when Operat

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