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NTE4164 - high speed Dynamic Random Access Memory

NTE4164 Description

NTE4164 Integrated Circuit NMOS, 64K Dynamic RAM, 150ns 16 *Lead DIP Type Package .
The NTE4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16. Lead DIP type package organized as 65,536 words of one bit each.

NTE4164 Features

* D 65,536 x 1 Organization D Single +5V Supply (10% Tolerance) D Upward Pin Compatible with 4116 (16K Dynamic RAM) D Max Access Time from RAS: Less than 150ns D Min Cycle Time (Read or Write): Less than 260ns D Lon

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Datasheet Details

Part number
NTE4164
Manufacturer
NTE
File Size
236.75 KB
Datasheet
NTE4164-NTE.pdf
Description
high speed Dynamic Random Access Memory

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high speed Dynamic Random Access Memory NTE
NTE NTE4164-like datasheet