NTE4164 Datasheet - NTE

NTE4164, high speed Dynamic Random Access Memory

NTE4164 Integrated Circuit NMOS, 64K Dynamic RAM, 150ns 16 *Lead DIP Type Package .
The NTE4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16. Lead DIP type package organized as 65,536 words of one bit each.

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NTE4164-NTE.pdf

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Datasheet Details

Part number:

NTE4164

Manufacturer:

NTE

File Size:

236.75 KB

Description:

high speed Dynamic Random Access Memory

Features

* D 65,536 x 1 Organization D Single +5V Supply (10% Tolerance) D Upward Pin Compatible with 4116 (16K Dynamic RAM) D Max Access Time from RAS: Less than 150ns D Min Cycle Time (Read or Write): Less than 260ns D Lon

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NTE4164 high speed Dynamic Random Access Memory NTE

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