NTE4164 high speed Dynamic Random Access Memory

NTE

Description

NTE4164 Integrated Circuit NMOS, 64K Dynamic RAM, 150ns 16 *Lead DIP Type Package .
The NTE4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16. Lead DIP type package organized as 65,536 words of one bit each.

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Datasheet Specifications

Part number: NTE4164
Manufacturer: NTE
File Size: 236.75 KB
Datasheet: NTE4164-NTE.pdf
Description: high speed Dynamic Random Access Memory

Features

* D 65,536 x 1 Organization D Single +5V Supply (10% Tolerance) D Upward Pin Compatible with 4116 (16K Dynamic RAM) D Max Access Time from RAS: Less than 150ns D Min Cycle Time (Read or Write): Less than 260ns D Lon

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NTE4164 high speed Dynamic Random Access Memory NTE

NTE NTE4164-like datasheet