NTE4164
NTE
236.75kb
High speed dynamic random access memory. The NTE4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16
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📁 Related Datasheet
NTE4151P - P-Channel MOSFET
(ON Semiconductor)
NTA4151P, NTE4151P
MOSFET – Single, P-Channel, Small Signal, Gate Zener, SC-75, SC-89
-20 V, -760 mA
Features
• Low RDS(on) for Higher Efficiency an.
NTE4153N - Small Signal MOSFET
(On Semiconductor)
NTA4153N, NTE4153N, NVA4153N, NVE4153N
MOSFET – Single, N-Channel with ESD Protection, Small Signal, SC-75 and SC-89
20 V, 915 mA
Features
• Low RDS.
NTE4153NT1G - N-Channel MOSFET
(VBsemi)
NTE4153NT1G
NTE4153NT1G Datasheet
.VBsemi.
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.270 at VGS = 4.5 V
20 0.
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