NTE4164 Datasheet (NTE) - high speed Dynamic Random Access Memory

NTE4164, high speed Dynamic Random Access Memory

The NTE4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16 *Lead DIP type package organized as 65,536 words of one bit each.

Refresh period is extended to 4 milliseconds, and during this period each of the 256 rows must be strobed with RAS in order to retain data.

CAS can remain

NTE4164 Features

* D 65,536 x 1 Organization D Single +5V Supply (10% Tolerance) D Upward Pin Compatible with 4116 (16K Dynamic RAM) D Max Access Time from RAS: Less than 150ns D Min Cycle Time (Read or Write): Less than 260ns D Lon