Part number:
NTE4164
Manufacturer:
NTE
File Size:
236.75 KB
Description:
High speed dynamic random access memory.
* D 65,536 x 1 Organization D Single +5V Supply (10% Tolerance) D Upward Pin Compatible with 4116 (16K Dynamic RAM) D Max Access Time from RAS: Less than 150ns D Min Cycle Time (Read or Write): Less than 260ns D Lon
NTE4164
NTE
236.75 KB
High speed dynamic random access memory.
📁 Related Datasheet
NTE4151P - P-Channel MOSFET
(ON Semiconductor)
NTA4151P, NTE4151P
MOSFET – Single, P-Channel, Small Signal, Gate Zener, SC-75, SC-89
-20 V, -760 mA
Features
• Low RDS(on) for Higher Efficiency an.
NTE4153N - Small Signal MOSFET
(On Semiconductor)
NTA4153N, NTE4153N, NVA4153N, NVE4153N
MOSFET – Single, N-Channel with ESD Protection, Small Signal, SC-75 and SC-89
20 V, 915 mA
Features
• Low RDS.
NTE4153NT1G - N-Channel MOSFET
(VBsemi)
NTE4153NT1G
NTE4153NT1G Datasheet
.VBsemi.
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.270 at VGS = 4.5 V
20 0.
NTE4000 - (NTE4000 - NTE4015B) Integrated Circuits - CMOS
(NTE Electronics)
.
NTE4001B - (NTE4000 - NTE4015B) Integrated Circuits - CMOS
(NTE Electronics)
.
NTE4002B - (NTE4000 - NTE4015B) Integrated Circuits - CMOS
(NTE Electronics)
.
NTE4006B - (NTE4000 - NTE4015B) Integrated Circuits - CMOS
(NTE Electronics)
.
NTE4007 - (NTE4000 - NTE4015B) Integrated Circuits - CMOS
(NTE Electronics)
.
