NTE4153N
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Small signal mosfet.
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NTE4153NT1G - N-Channel MOSFET
(VBsemi)
NTE4153NT1G
NTE4153NT1G Datasheet
.VBsemi.
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.270 at VGS = 4.5 V
20 0.
NTE4151P - P-Channel MOSFET
(ON Semiconductor)
NTA4151P, NTE4151P
MOSFET – Single, P-Channel, Small Signal, Gate Zener, SC-75, SC-89
-20 V, -760 mA
Features
• Low RDS(on) for Higher Efficiency an.
NTE4164 - high speed Dynamic Random Access Memory
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NTE4164 Integrated Circuit NMOS, 64K Dynamic RAM, 150ns 16−Lead DIP Type Package
Description: The NTE4164 is a high speed Dynamic Random Access Memory.
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