NTE4153NT1G - N-Channel MOSFET

VBsemi

NTE4153NT1G Description

NTE4153NT1G NTE4153NT1G Datasheet www.VBsemi.com N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX.0.270 at VGS = 4.5 V 20 0.

NTE4153NT1G Features

* TrenchFET® power MOSFET

NTE4153NT1G Applications

* Smart phones, tablet PC’s - DC/DC converters - Boost converters - Load switch, OVP switch G1 3D G S2 Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Dra

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Datasheet Details

Part number: NTE4153NT1G
Manufacturer: VBsemi
File Size: 385.02 KB
Datasheet: NTE4153NT1G-VBsemi.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET VBsemi

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