* TrenchFET® power MOSFET
* 100 % Rg tested APPLICATIONS
* Smart phones, tablet PC’s - DC/DC converters - Boost converters - Load switch, OVP switch G1 3D G S2 Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Volt
NTE4153NT1G Datasheet (385.02 KB)
NTE4153NT1G
VBsemi
385.02 KB
N-channel mosfet.
NTE4153NT1G
NTE4153NT1G Datasheet
www.VBsemi.com
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.270 at VGS = 4.5 V
20 0.
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