BLD6G21L-50 Datasheet - NXP Semiconductors

BLD6G21L-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz. The main and peak device, input splitter and output co.

BLD6G21L-50 Features

* I Typical TD-SCDMA performance at frequencies from 2010 MHz to 2025 MHz: N Average output power = 8 W N Power gain = 13.5 dB N Efﬁciency = 42 % I Fully optimized integrated Doherty concept: N integrated asymmetrical power splitter at input N integrated power combiner N peak biasing down to 0 V N low

BLD6G21L-50_NXPSemiconductors.pdf

BLD6G21L-50 Datasheet Preview — Preview of BLD6G21L-50 PDF

Datasheet Details

Part number:

BLD6G21L-50

Manufacturer:

NXP ↗ Semiconductors

File Size:

162.90 KB

Description:

Td-scdma 2010 mhz to 2025 mhz fully integrated doherty transistor.

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BLD6G21L-50 BLD6G21L-50 TD-SCDMA 2010 MHz 2025 MHz fully integrated Doherty transistor NXP Semiconductors

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