BLD6G21L-50 Datasheet, Transistor, NXP Semiconductors

BLD6G21L-50 Features

• Transistor I Typical TD-SCDMA performance at frequencies from 2010 MHz to 2025 MHz: N Average output power = 8 W N Power gain = 13.5 dB N Efficiency = 42 % I Fully optimized integrated Doherty conc

PDF File Details

Part number:

BLD6G21L-50

Manufacturer:

NXP ↗ Semiconductors

File Size:

162.90kb

Download:

📄 Datasheet

Description:

Td-scdma 2010 mhz to 2025 mhz fully integrated doherty transistor. The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology.

BLD6G21L-50 Application

• Applications at frequencies from 2010 MHz to 2025 MHz. The main and peak device, input splitter and output combiner are integrated in a single packa

TAGS

📁 Related Datasheet

BLD6G21LS-50 - TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor (NXP Semiconductors)
BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 01 — 28 October 2009 Objective data sheet 1. Product.

BLD6G22L-50 - W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor (NXP Semiconductors)
BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 01 — 15 December 2009 Objective data sheet 1. Product .

BLD6G22L-50 - W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor (Ampleon)
BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product .

BLD6G22LS-50 - W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor (NXP Semiconductors)
BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 01 — 15 December 2009 Objective data sheet 1. Product .

BLD6G22LS-50 - W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor (Ampleon)
BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product .

BLD122D - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
BLD122D Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.  / Features ，。 High Voltage Ca.

BLD123D - SILICON NPN TRANSISTOR (LZG)
BLD123D NPN /SILICON NPN TRANSISTOR : 、、。 Purpose: High frequency electronic lighting ballast applications，converters, inverters, switching regula.

BLD123D - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
BLD123D Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.  / Features ，。 High Voltage Ca.

BLD128D - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
BLD128D Rev.E Mar.-2016 DATA SHEET / Descriptions TO-220  NPN 。Silicon NPN transistor in a TO-220 Plastic Package.  / Features ,,, ROHS 。 Hi.

BLD128D - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (JILIN SINO)
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R BLD128D MAIN CHARACTERISTICS IC 4A VCEO 400V PC(TO-220C) 75W Package z z z z z.