BLD6G22LS-50, BLD6G22L-50 Datasheet - NXP Semiconductors

BLD6G22LS-50 W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor

The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner.

BLD6G22LS-50 Features

* Typical W-CDMA performance at frequencies from 2110 MHz to 2170 MHz: Average output power = 8 W Power gain = 13.3 dB Efficiency = 38 %

* Fully optimized integrated Doherty concept: integrated asymmetrical power splitter at input integrated power combiner peak biasing do

BLD6G22L-50_NXPSemiconductors.pdf

BLD6G22LS-50 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLD6G22LS-50, BLD6G22L-50. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

BLD6G22LS-50, BLD6G22L-50

Manufacturer:

NXP ↗ Semiconductors

File Size:

144.24 KB

Description:

W-cdma 2110 mhz to 2170 mhz fully integrated doherty transistor.

Note:

This datasheet PDF includes multiple part numbers: BLD6G22LS-50, BLD6G22L-50.
Please refer to the document for exact specifications by model.

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BLD6G22LS-50 BLD6G22L-50 W-CDMA 2110 MHz 2170 MHz Fully Integrated Doherty Transistor NXP Semiconductors

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