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BLD6G22L-50 Datasheet - NXP Semiconductors

BLD6G22L-50, W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor

BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev.01 * 15 December 2009 Objective data sheet 1..
The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology.
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BLD6G22L-50_NXPSemiconductors.pdf

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Datasheet Details

Part number:

BLD6G22L-50

Manufacturer:

NXP ↗ Semiconductors

File Size:

144.24 KB

Description:

W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor

Features

* Typical W-CDMA performance at frequencies from 2110 MHz to 2170 MHz: ‹ Average output power = 8 W ‹ Power gain = 13.3 dB ‹ Efficiency = 38 %
* Fully optimized integrated Doherty concept: ‹ integrated asymmetrical power splitter at input ‹ integrated power combiner ‹ peak biasing do

Applications

* at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only

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