BUK457-400A
NXP ↗ Semiconductors
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Power mos transistor.
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BUK457-400A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=400V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK457-400B - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=400V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK457-400B - POWER MOS TRANSISTOR
(NXP Semiconductors)
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BUK457-600A - Silicon N-MOSFET Transistor
(Philips)
OEM:Philips
Transistor BUK457-600B
Datasheet
Silicon N-MOSFET Transistor BUK457-600B
600V / 7.1A
DATASHEET
OEM – Philips
Source: Philips Databoo.
BUK457-600B - Silicon N-MOSFET Transistor
(Philips)
OEM:Philips
Transistor BUK457-600B
Datasheet
Silicon N-MOSFET Transistor BUK457-600B
600V / 7.1A
DATASHEET
OEM – Philips
Source: Philips Databoo.
BUK451-100A - PowerMOS transistor
(NXP)
Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect pow.
BUK451-100B - PowerMOS transistor
(NXP)
Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect pow.
BUK452-100A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK452-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK452-100A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK452-100B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK452-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.