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BUK653R3-30C N-Channel MOSFET

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Description

TO-220AB BUK653R3-30C N-channel TrenchMOS intermediate level FET Rev.1 * 13 July 2011 Product data sheet 1.Product profile 1.1 General.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

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Features

* AEC Q101 compliant
* Suitable for standard and logic level gate drive sources

BUK653R3-30C Distributors

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