BUK652R3-40C N-channel 40 V 2.3 m intermediate level Automotive TrenchMOS FET

NXP

Description

www.DataSheet4U.com BUK652R3-40C N-channel 40 V 2.3 mΩ intermediate level Automotive TrenchMOS FET Rev.01 * 20 May 2010 Objective data sheet.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

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Datasheet Specifications

Part number: BUK652R3-40C
Manufacturer: NXP ↗
File Size: 259.38 KB
Datasheet: BUK652R3-40C_PhilipsSemiconductors.pdf
Description: N-channel 40 V 2.3 m intermediate level Automotive TrenchMOS FET

Features

* AEC Q101 compliant
* Suitable for intermediate level gate drive sources

BUK652R3-40C Distributors

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BUK652R3-40C N-channel 2.3 intermediate level Automotive TrenchMOS FET NXP

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