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BUK652R7-30C Datasheet - NXP

N-channel TrenchMOS intermediate level FET

BUK652R7-30C Features

* AEC Q101 compliant

* Suitable for intermediate level gate drive sources

* Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications

* 12 V Automotive systems

* Electric and electro-hydraulic power steering

* Motors, lamps a

BUK652R7-30C Datasheet (214.53 KB)

Preview of BUK652R7-30C PDF

Datasheet Details

Part number:

BUK652R7-30C

Manufacturer:

NXP ↗

File Size:

214.53 KB

Description:

N-channel trenchmos intermediate level fet.
www.DataSheet4U.com BUK652R7-30C N-channel TrenchMOS intermediate level FET Rev. 01 5 July 2010 Objective data sheet 1. Product profile 1..

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BUK652R7-30C N-channel TrenchMOS intermediate level FET NXP

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