BUK652R7-30C Datasheet, Fet, NXP

BUK652R7-30C Features

• Fet
• AEC Q101 compliant
• Suitable for intermediate level gate drive sources
• Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications

PDF File Details

Part number:

BUK652R7-30C

Manufacturer:

NXP ↗

File Size:

214.53kb

Download:

📄 Datasheet

Description:

N-channel trenchmos intermediate level fet. Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS

BUK652R7-30C Application

• Applications 1.2 Features and benefits
• AEC Q101 compliant
• Suitable for intermediate level gate drive sources
• Suitabl

TAGS

BUK652R7-30C

NXP

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