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BUK652R1-30C N-channel TrenchMOS intermediate level FET

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Description

www.DataSheet4U.com BUK652R1-30C N-channel TrenchMOS intermediate level FET Rev.01 * 5 July 2010 Objective data sheet 1.Product profile 1..
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

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Features

* AEC Q101 compliant
* Suitable for intermediate level gate drive sources

BUK652R1-30C Distributors

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