BUK652R1-30C Datasheet, Fet, NXP

✔ BUK652R1-30C Features

AEC Q101 compliant
Suitable for intermediate level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications
12 V Au

✔ BUK652R1-30C Application

1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate drive sources
Suit

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Part number:

BUK652R1-30C

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📄 Datasheet

Description:

N-channel trenchmos intermediate level fet. Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS

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Stock and price

Rochester Electronics LLC

PFET, 120A I(D), 30V, 0.0035OHM,

DigiKey

BUK652R1-30C,127

0 In Stock

Qty : 290 units

Unit Price : $1.04

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BUK652R1-30C N-channel TrenchMOS intermediate level FET NXP