BUK7C06-40AITE Datasheet - NXP Semiconductors

BUK7C06-40AITE N-channel TrenchMOS standard level FET

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology, featuring very low on-state resistance and including TrenchPLUS current sensing, and diodes for ElectroStatic Discharge (ESD) and overtemperature protection. www.DataSheet4U.com 1.2 Featu.

BUK7C06-40AITE Features

* s Q101 compliant s ESD protection s Integrated temperature sensor s Integrated current sensor 1.3 Applications s Variable valve timing for engines s Automotive and power switching s Electrical power assisted steering s Fan control 1.4 Quick reference data s VDS ≤ 40 V s ID ≤ 155 A s RDSon = 4.7 mΩ

BUK7C06-40AITE_NXPSemiconductors.pdf