PBHV8560Z 0.5 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors

Description

SOT223 PBHV8560Z 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 13 March 2015 Product data sheet 1.General .
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic packa.

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Datasheet Specifications

Part number: PBHV8560Z
Manufacturer: NXP ↗ Semiconductors
File Size: 207.77 KB
Datasheet: PBHV8560Z-NXPSemiconductors.pdf
Description: 0.5 A NPN high-voltage low VCEsat (BISS) transistor

Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability
* High collector current gain hFE at high IC

Applications

* Electronic ballast for fluorescent lighting
* LED driver for LED chain module
* LCD backlighting
* High Intensity Discharge (HID) front lighting
* Automotive motor management
* Hook switch for wired telecom
* Switch Mode Power Supply (SMPS)

PBHV8560Z Distributors

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PBHV8560Z 0.5 NPN high-voltage low VCEsat BISS transistor NXP Semiconductors

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