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PBHV8515QA - NPN Transistor

PBHV8515QA Description

PBHV8515QA 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 19 November 2015 Product data sheet 1.General .
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD).

PBHV8515QA Features

* High voltage
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* Low package height of 0.37 mm
* AEC-Q101 qualified
* Suitable for Automatic Optical

PBHV8515QA Applications

* LED driver for LED chain module
* High Intensity Discharge (HID) front lighting
* Automotive motor management
* Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector

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