PBHV2160Z NPN high-voltage low VCEsat (BISS) transistor

NXP

Description

SOT223 PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 24 June 2015 Product data sheet 1.General .
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic packa.

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Datasheet Specifications

Part number: PBHV2160Z
Manufacturer: NXP ↗
File Size: 195.63 KB
Datasheet: PBHV2160Z-NXP.pdf
Description: NPN high-voltage low VCEsat (BISS) transistor

Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability

Applications

* Electronic ballast for fluorecent lighting
* LED driver for LED chain module
* LCD backlighting
* HID front lighting
* Hook switch for wired telecom
* Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Symbol VCEO IC Quick reference

PBHV2160Z Distributors

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