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PBHV8215Z NPN Transistor

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Description

PBHV8215Z 150 V, 2 A NPN high-voltage low VCEsat (BISS) transistor Rev.01 * 11 November 2009 Product data sheet 1.Product profile 1.1 G.
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic packa.

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Features

* High voltage
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* AEC-Q101 qualified

Applications

* LED driver for LED chain module
* LCD backlighting
* Automotive motor management
* Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain [1]

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