PMDPB65UP Dual P-Channel MOSFET

NXP Semiconductors

Description

PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Rev.2 * 8 March 2011 Product data sheet 1.Product profile 1.1 General .
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) pla.

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Datasheet Specifications

Part number: PMDPB65UP
Manufacturer: NXP ↗ Semiconductors
File Size: 202.95 KB
Datasheet: PMDPB65UP-NXPSemiconductors.pdf
Description: Dual P-Channel MOSFET

Features

* Trench MOSFET technology
* 1.8 V RDSon rated for low voltage gate drive
* 1 kV ElectroStatic Discharge (ESD) protection
* Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm

Applications

* Charging switch for portable devices
* DC-to-DC converters
* Small brushless DC motor drive
* Power management in battery-driven portables
* Hard disk and computing power management 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-

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PMDPB65UP Dual P-Channel MOSFET NXP Semiconductors

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