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PMDPB58UPE dual P-channel MOSFET

PMDPB58UPE Description

PMDPB58UPE 20 V dual P-channel Trench MOSFET 3 February 2016 Product data sheet 1.General .
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD).

PMDPB58UPE Features

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology

PMDPB58UPE Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current

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