PMDPB58UPE dual P-channel MOSFET

nexperia

Description

PMDPB58UPE 20 V dual P-channel Trench MOSFET 3 February 2016 Product data sheet 1.General .
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD).

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Datasheet Specifications

Part number: PMDPB58UPE
Manufacturer: nexperia ↗
File Size: 702.24 KB
Datasheet: PMDPB58UPE-nexperia.pdf
Description: dual P-channel MOSFET

Features

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current

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PMDPB58UPE dual P-channel MOSFET nexperia

nexperia PMDPB58UPE-like datasheet