PMGD280UN Dual N-channel mTrenchMOS ultra low level FET

NXP Semiconductors

Description

www.DataSheet4U.com PMGD280UN Dual N-channel µTrenchMOS™ ultra low level FET MBD128 Rev.01 * 10 February 2004 Product data 1.Product pro.
Dual N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

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Datasheet Specifications

Part number: PMGD280UN
Manufacturer: NXP ↗ Semiconductors
File Size: 120.56 KB
Datasheet: PMGD280UN_NXPSemiconductors.pdf
Description: Dual N-channel mTrenchMOS ultra low level FET

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PMGD280UN Dual N-channel mTrenchMOS ultra low level FET NXP Semiconductors

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