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PMGD130UN dual N-channel Trench MOSFET

PMGD130UN Description

PMGD130UN 20 V, dual N-channel Trench MOSFET Rev.1 * 1 June 2012 Product data sheet 1.Product profile 1.1 General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

PMGD130UN Features

* Low threshold voltage
* Very fast switching

PMGD130UN Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching sircuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS

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Datasheet Details

Part number
PMGD130UN
Manufacturer
NXP ↗
File Size
325.44 KB
Datasheet
PMGD130UN-NXP.pdf
Description
dual N-channel Trench MOSFET

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dual N-channel Trench MOSFET NXP
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