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PMGD290XN Datasheet - NXP Semiconductors

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PMGD290XN Dual N-channel mTrenchMOS extremely low level FET

www.DataSheet4U.com PMGD290XN Dual N-channel µTrenchMOS™ extremely low level FET MBD128 Rev.01 * 26 February 2004 Product data 1.Product.
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

PMGD290XN_NXPSemiconductors.pdf

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Datasheet Details

Part number:

PMGD290XN

Manufacturer:

NXP ↗ Semiconductors

File Size:

122.64 KB

Description:

Dual N-channel mTrenchMOS extremely low level FET

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