* s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Low threshold voltage. 1.3 Applications s Driver circuits s Switching in portable appliances. 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 0.41 W s ID ≤ 0.86 A s RDSon ≤ 350 mΩ
PMGD290XN Datasheet (122.64 KB)
PMGD290XN
NXP ↗ Semiconductors
122.64 KB
Dual n-channel mtrenchmos extremely low level fet.
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PMGD290XN
Dual N-channel µTrenchMOS™ extremely low level FET
MBD128
Rev. 01
* 26 February 2004
Product data
1. Product.
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