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PMGD290XN Dual N-channel mTrenchMOS extremely low level FET

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Description

www.DataSheet4U.com PMGD290XN Dual N-channel µTrenchMOS™ extremely low level FET MBD128 Rev.01 * 26 February 2004 Product data 1.Product.
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

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Datasheet Specifications

Part number
PMGD290XN
Manufacturer
NXP ↗ Semiconductors
File Size
122.64 KB
Datasheet
PMGD290XN_NXPSemiconductors.pdf
Description
Dual N-channel mTrenchMOS extremely low level FET

PMGD290XN Distributors

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Dual N-channel mTrenchMOS extremely low level FET NXP Semiconductors
NXP Semiconductors PMGD290XN-like datasheet