PMGD290XN Dual N-channel mTrenchMOS extremely low level FET

NXP Semiconductors

Description

www.DataSheet4U.com PMGD290XN Dual N-channel µTrenchMOS™ extremely low level FET MBD128 Rev.01 * 26 February 2004 Product data 1.Product.
Dual N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

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Datasheet Specifications

Part number: PMGD290XN
Manufacturer: NXP ↗ Semiconductors
File Size: 122.64 KB
Datasheet: PMGD290XN_NXPSemiconductors.pdf
Description: Dual N-channel mTrenchMOS extremely low level FET

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PMGD290XN Dual N-channel mTrenchMOS extremely low level FET NXP Semiconductors

NXP Semiconductors PMGD290XN-like datasheet