PMGD370XN Dual N-channel extremely low level FET

Philips

Description

PMGD370XN Dual N-channel µTrenchMOS™ extremely low level FET MBD128 Rev.01 * 27 February 2004 Product data 1.Product proﬁle 1.1 Descripti.
Dual N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

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Datasheet Specifications

Part number: PMGD370XN
Manufacturer: Philips
File Size: 77.71 KB
Datasheet: PMGD370XN-Philips.pdf
Description: Dual N-channel extremely low level FET

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PMGD370XN Dual N-channel extremely low level FET Philips

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