PMGD370XN - Dual N-channel extremely low level FET

Philips

Datasheet Details

Part number	PMGD370XN
Manufacturer	Philips ↗
File Size	77.71 KB
Description	Dual N-channel extremely low level FET
Datasheet	PMGD370XN-Philips.pdf

Dual N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Low threshold voltage. 1.3.

📁 PMGD370XN Similar Datasheet

PMGD130UN - dual N-channel Trench MOSFET (NXP)
PMGD175XN - MOSFET (NXP)
PMGD175XNE - dual N-channel MOSFET (nexperia)
PMGD280UN - Dual N-channel mTrenchMOS ultra low level FET (NXP Semiconductors)
PMGD290UCEA - 725 / 500 mA N/P-channel Trench MOSFET (NXP)
PMGD290XN - Dual N-channel mTrenchMOS extremely low level FET (NXP Semiconductors)
PMGD400UN - Dual N-channel uTrenchMOS ultra low level FET (NXP)
PMGD780SN - Dual N-channel mTrenchMOS standard level FET (NXP Semiconductors)

Other Datasheets by Philips

Published: Aug 18, 2014 |