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PMGD370XN Dual N-channel extremely low level FET

PMGD370XN Description

PMGD370XN Dual N-channel µTrenchMOS™ extremely low level FET MBD128 Rev.01 * 27 February 2004 Product data 1.Product profile 1.1 Descripti.
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

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Datasheet Details

Part number
PMGD370XN
Manufacturer
Philips
File Size
77.71 KB
Datasheet
PMGD370XN-Philips.pdf
Description
Dual N-channel extremely low level FET

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Dual N-channel extremely low level FET Philips
Philips PMGD370XN-like datasheet