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PMGD175XN MOSFET

PMGD175XN Description

PMGD175XN 30 V, dual N-channel Trench MOSFET Rev.1 * 1 June 2012 Product data sheet 1.Product profile 1.1 General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

PMGD175XN Features

* Very fast switching

PMGD175XN Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching sircuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS

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Datasheet Details

Part number
PMGD175XN
Manufacturer
NXP ↗
File Size
326.85 KB
Datasheet
PMGD175XN-NXP.pdf
Description
MOSFET

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