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PMZB790SN single N-channel Trench MOSFET

PMZB790SN Description

PMZB790SN 14 August 2012 60 V, single N-channel Trench MOSFET Product data sheet 1.Product profile 1.1 General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

PMZB790SN Features

* Fast switching
* Trench MOSFET technology
* Logic-level compatible

PMZB790SN Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID =

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