* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance and resistance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, QOSS for high system efficiencies at low and high loads 1.3 Applications
* DC-to-D
PSMN8R0-30YLC Datasheet (493.91 KB)
PSMN8R0-30YLC
NXP ↗ Semiconductors
493.91 KB
N-channel mosfet.
www.DataSheet.co.kr LF PA K PSMN8R0-30YLC N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 1 September .
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