Datasheet4U Logo Datasheet4U.com

BAT120 - Schottky barrier double diodes

Datasheet Summary

Description

PINNING BAT120 PIN A 1 2 3 4 k1 n.c.

k2 a1, a2 C a1 n.c.

a2 k1, k2 S a1 n.c.

Features

  • Low switching losses.
  • Capability of absorbing very high surge current.
  • Fast recovery time.
  • Guard ring protected.
  • Plastic SMD package.

📥 Download Datasheet

Datasheet preview – BAT120

Datasheet Details

Part number BAT120
Manufacturer NXP
File Size 68.32 KB
Description Schottky barrier double diodes
Datasheet download datasheet BAT120 Datasheet
Additional preview pages of the BAT120 datasheet.

📁 Similar Datasheet

  • BAT120A - Schottky barrier double diodes (nexperia)
  • BAT1000 - 1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
  • BAT114-099 - Silicon Dual Schottky Diode (Siemens Semiconductor Group)
  • BAT114-099R - Silicon Crossover Ring Quad Schottky Diode (Siemens Semiconductor Group)
  • BAT14 - HiRel Silicon Schottky Diode (Siemens Semiconductor Group)
  • BAT14 - Silicon Schottky Diode (Infineon Technologies AG)
  • BAT14-013 - HiRel Silicon Schottky Diode (Siemens Semiconductor Group)
  • BAT14-014 - Silicon Schottky Diodes (Siemens Semiconductor Group)
  • BAT14-014 - HiRel Silicon Schottky Diode (Siemens Semiconductor Group)
  • BAT14-020D - Silicon Schottky Diodes (Siemens Semiconductor Group)
Other Datasheets by NXP
  • BAT120A - Schottky barrier double diodes
  • BAT120C - Schottky barrier double diodes
  • BAT120S - Schottky barrier double diodes
  • BAT140 - Schottky barrier double diodes
  • BAT140A - Schottky barrier double diodes
  • BAT140C - Schottky barrier double diodes
  • BAT140S - Schottky barrier double diodes
  • BAT160 - Silicon Schottky Diode

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT120 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 1998 Oct 30 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package 1 2 3 MSB002 - 1 BAT120 series PINNING BAT120 PIN A 1 2 3 4 k1 n.c. k2 a1, a2 C a1 n.c. a2 k1, k2 S a1 n.c. k2 k1, a2 Fig.2 BAT120A diode configuration (symbol). 2 n.c. MGL171 4 page 1 3 age 4 page 4 1 3 2 n.c.
Published: |