BAV170 Datasheet, Diode, NXP

BAV170 Features

• Diode
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage: max. 75 V
• Repetitive peak re

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BAV170

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NXP ↗

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📄 Datasheet

Description:

Low-leakage double diode. Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common cathode configuration.

BAV170 Application

• Applications in surface mounted circuits. MARKING TYPE NUMBER BAV170 MARKING CODE(1) JX
• Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made

TAGS

BAV170

NXP

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