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BAV170 Low-leakage double diode

BAV170 Description

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV170 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2003 Mar .
Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package.

BAV170 Features

* Plastic SMD package
* Low leakage current: typ. 3 pA
* Switching time: typ. 0.8 µs
* Continuous reverse voltage: max. 75 V
* Repetitive peak reverse voltage: max. 85 V

BAV170 Applications

* in surface mounted circuits. MARKING TYPE NUMBER BAV170 MARKING CODE(1) JX
* Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. handbook, 4 columns 2 1 Top view 3 21 3 MAM108 Fig.1 Simplified outline (SOT23) and symbol. 2003 Mar 25 2 NXP Semiconducto

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Low-leakage double diode NXP
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