BFU580G Datasheet - NXP

NPN wideband silicon RF transistor

* Low noise, high linearity, high breakdown RF transistor

* AEC-Q101 qualified

* Minimum noise figure (NFmin) = 0.75 dB at 900 MHz

* Maximum stable gain 15.5 dB at 900 MHz

* 11 GHz fT silicon technology 1.3 Applications

* Applications requiring high supply voltages and high b

BFU580G

228.56 KB

Npn wideband silicon rf transistor.

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BFU580G NPN wideband silicon transistor NXP

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