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BFU590G NPN wideband silicon RF transistor

BFU590G Description

627 BFU590G NPN wideband silicon RF transistor Rev.1 * 28 April 2014 Product data sheet 1.Product profile 1.1 General .
NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.

BFU590G Features

* Medium power, high linearity, high breakdown voltage RF transistor
* AEC-Q101 qualified
* Maximum stable gain 13 dB at 900 MHz
* PL(1dB) 21.5 dBm at 900 MHz

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Datasheet Details

Part number
BFU590G
Manufacturer
NXP ↗
File Size
218.07 KB
Datasheet
BFU590G-NXP.pdf
Description
NPN wideband silicon RF transistor

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NPN wideband silicon transistor NXP
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