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BFU910F NPN wideband silicon germanium RF transistor

BFU910F Description

BFU910F NPN wideband silicon germanium RF transistor Rev.2 * 16 January 2015 Product data sheet 1.Product profile 1.1 General descripti.
NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

BFU910F Features

* Low noise high gain microwave transistor
* Minimum noise figure (NFmin) = 0.65 dB at 12 GHz
* Maximum stable gain 14.2 dB at 12 GHz

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Datasheet Details

Part number
BFU910F
Manufacturer
NXP ↗
File Size
118.76 KB
Datasheet
BFU910F-NXP.pdf
Description
NPN wideband silicon germanium RF transistor

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NPN wideband silicon germanium transistor NXP
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