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BFU910F - NPN wideband silicon germanium RF transistor

NXP

The BFU910F by NXP is a NPN wideband silicon germanium RF transistor. Below is the official datasheet preview.

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BFU910F NPN wideband silicon germanium RF transistor by NXP - Datasheet Preview — Official preview page of the BFU910F NPN wideband silicon germanium RF transistor datasheet (NXP).

Datasheet Details

Part number	BFU910F
Manufacturer	NXP
File Size	118.76 KB
Description	NPN wideband silicon germanium RF transistor
Datasheet	BFU910F-NXP.pdf
Additional preview pages of the BFU910F datasheet.

BFU910F Product details

Description

NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features

Low noise high gain microwave transistor.
Minimum noise figure (NFmin) = 0.65 dB at 12 GHz.
Maximum stable gain 14.2 dB at 12 GHz.
90 GHz fT SiGe technology 1.3.

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Published: Mar 23, 2016 |