BFU910F Datasheet - NXP

BFU910F NPN wideband silicon germanium RF transistor

BFU910F Features

* Low noise high gain microwave transistor

* Minimum noise figure (NFmin) = 0.65 dB at 12 GHz

* Maximum stable gain 14.2 dB at 12 GHz

* 90 GHz fT SiGe technology 1.3 Applications

* Ku band DBS Low-Noise blocks 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C

Datasheet Details

BFU910F

118.76 KB

Npn wideband silicon germanium rf transistor.

📁 Related Datasheet

BFU450C FILTERS (Murata Electronics)

BFU450C4N FILTERS (Murata Electronics)

BFU450K3 FILTERS (Murata Electronics)

BFU510 NPN SiGe wideband transistor (NXP)

BFU520 NPN wideband silicon RF transistor (NXP)

BFU520A NPN wideband silicon RF transistor (NXP)

BFU520W NPN wideband silicon RF transistor (NXP)

BFU520X NPN wideband silicon RF transistor (NXP)

TAGS

BFU910F NPN wideband silicon germanium transistor NXP

BFU910F Distributor