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BLF178P - Power LDMOS transistor

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NXP

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BLF178P Power LDMOS transistor by NXP - Datasheet Preview — Datasheet preview – BLF178P

Datasheet Details

Part number	BLF178P
Manufacturer	NXP
File Size	230.86 KB
Description	Power LDMOS transistor
Datasheet	BLF178P Datasheet
Additional preview pages of the BLF178P datasheet.

Product details

Description

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.

Features

Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:.
Output power = 1200 W.
Power gain = 28.5 dB.
Efficiency = 75 %.
Easy power control.
Integrated ESD protection.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (10 MHz to 110 MHz).
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances.

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Published: Jan 27, 2016 |