BLF178P Power LDMOS transistor

NXP

Description

BLF178P Power LDMOS transistor Rev.2 * 16 February 2012 Product data sheet 1.Product profile 1.1 General .
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.

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Datasheet Specifications

Part number: BLF178P
Manufacturer: NXP ↗
File Size: 230.86 KB
Datasheet: BLF178P-NXP.pdf
Description: Power LDMOS transistor

Features

* Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:
* Output power = 1200 W
* Power gain = 28.5 dB
* Efficiency = 75 %
* Easy power control
* Integrated ESD protection
* Excellent ruggedness

BLF178P Distributors

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BLF178P Power LDMOS transistor NXP

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