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BLF178XRS - Power LDMOS transistor

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NXP

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BLF178XRS Power LDMOS transistor by NXP - Datasheet Preview — Datasheet preview – BLF178XRS

Datasheet Details

Part number	BLF178XRS
Manufacturer	NXP
File Size	192.69 KB
Description	Power LDMOS transistor
Datasheet	BLF178XRS Datasheet
Note	This datasheet PDF includes multiple part numbers: BLF178XRS, BLF178XR. Please refer to the document for exact specifications by model.
Additional preview pages of the BLF178XRS datasheet.

Product details

Description

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.

Features

Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:.
Output power = 1400 W.
Power gain = 28 dB.
Efficiency = 72 %.
Easy power control.
Integrated ESD protection.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (HF to 128 MHz).
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).

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Published: Jan 27, 2016 |