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BLF25M612G, BLF25M612 Power LDMOS transistor

BLF25M612G Description

BLF25M612; BLF25M612G Power LDMOS transistor Rev.3 * 16 December 2014 Product data sheet 1.Product profile 1.1 General .
12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

BLF25M612G Features

* High efficiency
* High power gain
* Excellent ruggedness
* Excellent thermal stability
* Integrated ESD protection
* Designed for broadband operation (2400 MHz to 2500 MHz)
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Ap

BLF25M612G Applications

* at frequencies from 2400 MHz to 2500 MHz. The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test

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This datasheet PDF includes multiple part numbers: BLF25M612G, BLF25M612. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BLF25M612G, BLF25M612
Manufacturer
NXP ↗
File Size
192.63 KB
Datasheet
BLF25M612-NXP.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF25M612G, BLF25M612.
Please refer to the document for exact specifications by model.

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