BLP8G21S-160PV Power LDMOS transistor

NXP

Description

BLP8G21S-160PV Power LDMOS transistor Rev.3 * 1 July 2014 Product data sheet 1.Product profile 1.1 General .
160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz.

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Datasheet Specifications

Part number: BLP8G21S-160PV
Manufacturer: NXP ↗
File Size: 126.46 KB
Datasheet: BLP8G21S-160PV-NXP.pdf
Description: Power LDMOS transistor

Features

* Designed for broadband operation (1880 MHz to 2025 MHz)
* Decoupling leads to enable improved video bandwidth
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Internally matched for ease of use
* High power gain
* Integrated ESD protection

Applications

* at frequencies from 1880 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1880 to 1920 600 28 2

BLP8G21S-160PV Distributors

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BLP8G21S-160PV Power LDMOS transistor NXP

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