BLP8G21S-160PV Datasheet (NXP) - Power LDMOS transistor

BLP8G21S-160PV, Power LDMOS transistor

160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz.

Table 1.

Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test circuit.

Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB

BLP8G21S-160PV Features

* Designed for broadband operation (1880 MHz to 2025 MHz)

* Decoupling leads to enable improved video bandwidth

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Internally matched for ease of use

* High power gain

* Integrated ESD protection