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BLP8G10S-270PW Power LDMOS transistor

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Description

BLP8G10S-270PW Power LDMOS transistor Rev.2 * 1 October 2015 Product data sheet 1.Product profile 1.1 General .
270 W LDMOS packaged symmetric Doherty power transistor for base station applications at frequencies from 700 MHz to 900 MHz.

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Datasheet Specifications

Part number
BLP8G10S-270PW
Manufacturer
Ampleon
File Size
458.70 KB
Datasheet
BLP8G10S-270PW-Ampleon.pdf
Description
Power LDMOS transistor

Features

* Excellent ruggedness
* High-efficiency
* Low thermal resistance providing excellent thermal stability

Applications

* at frequencies from 700 MHz to 900 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty application test circuit. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (dBm) (dB) (

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