Description
BLP8G05S-200; BLP8G05S-200G Power LDMOS transistor Rev.2 * 1 October 2015 Product data sheet 1.Product profile 1.1 General .
200 W LDMOS power transistor for base stations applications at frequencies from 400 MHz to 500 MHz.
Features
* High efficiency
* Excellent ruggedness
* Excellent thermal stability
* Integrated ESD protection
* Easy power control
* Designed for ISM operation (400 MHz to 500 MHz)
* Input integration for simple board design
* Compliant to Directive 2002/95/EC, regarding Restric
