BLP8G20S-80P Power LDMOS transistor

Ampleon

Description

BLP8G20S-80P Power LDMOS transistor Rev.4 * 6 April 2016 Product data sheet 1.Product profile 1.1 General .
80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to 2200 MHz.

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Datasheet Specifications

Part number: BLP8G20S-80P
Manufacturer: Ampleon
File Size: 342.62 KB
Datasheet: BLP8G20S-80P-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Designed for broadband operation (1800 MHz to 2200 MHz)
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Internally matched for ease of use
* High power gain
* Integrated ESD protection
* Compliant to Directive 2002/95/EC, regarding Restricti

Applications

* at frequencies from 1800 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common Doherty demo board. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 300 28 14.2 17 47 30 [1] 18

BLP8G20S-80P Distributors

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BLP8G20S-80P Power LDMOS transistor Ampleon

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