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BLP8G27-5 Power LDMOS transistor

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Description

BLP8G27-5 Power LDMOS transistor Rev.2 * 1 October 2015 Product data sheet 1.Product profile 1.1 General .
5 W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz.

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Datasheet Specifications

Part number
BLP8G27-5
Manufacturer
Ampleon
File Size
357.91 KB
Datasheet
BLP8G27-5-Ampleon.pdf
Description
Power LDMOS transistor

Features

* High efficiency
* Excellent ruggedness
* Designed for broadband operation
* Excellent thermal stability
* High power gain
* Integrated ESD protection

Applications

* at frequencies from 700 MHz to 2700 MHz. Table 1. Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 55 mA; in a class-AB application circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (dBm) (dB) (%) (dBc) 2-carrier W-CDMA 2700 55

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