Description
BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor Rev.1 * 25 July 2013 Product data sheet 1.Product profile 1.1 General .
The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power transistors for base station applications at frequencies from 700 MHz to 1000 MHz.
Features
* High efficiency
* Excellent ruggedness
* Designed for broadband operation (700 MHz to 1000 MHz)
* Excellent thermal stability
* High power gain
* Integrated ESD protection
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 App
Applications
* at frequencies from 700 MHz to 1000 MHz. Table 1. Application performance Typical RF performance at Tcase = 25 C; IDq = 224 mA in common source class-AB production circuit. Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
960 28 2.5 20.8 19.8 49 [1]
[
