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BLP8G10S-45PG, BLP8G10S-45P Power LDMOS transistor

BLP8G10S-45PG Description

BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor Rev.1 * 25 July 2013 Product data sheet 1.Product profile 1.1 General .
The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power transistors for base station applications at frequencies from 700 MHz to 1000 MHz.

BLP8G10S-45PG Features

* High efficiency
* Excellent ruggedness
* Designed for broadband operation (700 MHz to 1000 MHz)
* Excellent thermal stability
* High power gain
* Integrated ESD protection
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 App

BLP8G10S-45PG Applications

* at frequencies from 700 MHz to 1000 MHz. Table 1. Application performance Typical RF performance at Tcase = 25 C; IDq = 224 mA in common source class-AB production circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 960 28 2.5 20.8 19.8 49 [1] [

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: BLP8G10S-45PG, BLP8G10S-45P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BLP8G10S-45PG, BLP8G10S-45P
Manufacturer
NXP ↗
File Size
194.37 KB
Datasheet
BLP8G10S-45P-NXP.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLP8G10S-45PG, BLP8G10S-45P.
Please refer to the document for exact specifications by model.

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