BLS7G2730L-200P Datasheet - NXP

BLS7G2730L-200P LDMOS S-band radar power transistor

200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C. Test signal f VDS (GHz) (V) Class-AB production test circuit pulsed RF [1] 2.7 to 3.0 32 Application circuit .

BLS7G2730L-200P Features

* High efficiency

* Excellent ruggedness

* Designed for broadband operation

* Excellent thermal stability

* Easy power control

* Integrated ESD protection

* High flexibility with respect to pulse formats

* Internally matched for ease of use

* Compliant to Directiv

BLS7G2730L-200P Datasheet (177.01 KB)