BLS7G2730L-200P LDMOS S-band radar power transistor

NXP

Description

BLS7G2730L-200P; BLS7G2730LS-200P LDMOS S-band radar power transistor Rev.3 * 12 July 2013 Product data sheet 1.Product profile 1.1 Gener.
200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz.

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Datasheet Specifications

Part number: BLS7G2730L-200P
Manufacturer: NXP ↗
File Size: 177.01 KB
Datasheet: BLS7G2730L-200P-NXP.pdf
Description: LDMOS S-band radar power transistor

Features

* High efficiency
* Excellent ruggedness
* Designed for broadband operation
* Excellent thermal stability
* Easy power control
* Integrated ESD protection
* High flexibility with respect to pulse formats
* Internally matched for ease of use
* Compliant to Directiv

Applications

* in the frequency range from 2700 MHz to 3000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C. Test signal f VDS (GHz) (V) Class-AB production test circuit pulsed RF [1] 2.7 to 3.0 32 Application circuit pulsed RF [2] 2.7 to 3.0 32 pulsed RF [3] 2.9 to 3.1 3

BLS7G2730L-200P Distributors

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BLS7G2730L-200P LDMOS S-band radar power transistor NXP

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