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BLW80 - UHF power transistor

Datasheet Summary

Description

N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f.

and v.h.f.

range for nominal supply voltages up to 13,5 V.

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Datasheet Details

Part number BLW80
Manufacturer NXP
File Size 62.33 KB
Description UHF power transistor
Datasheet download datasheet BLW80 Datasheet
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLW80 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. BLW80 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-circuit. MODE OF OPERATION c.w. c.w. VCE V 12,5 12,5 f MHz 470 175 PL W 4 4 > Gp dB 8,0 > typ. 15,0 η % 60 typ.
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